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Transistors Power Field-Effect Transistors FQB34N20LTM

Transistors
FQB34N20LTM
Description: Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3

Overview of FQB34N20LTM by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FQB34N20LTM by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 50
  • 1 $4.9500
  • 7 $3.6300
  • 22 $3.3000
$3.3000 / $4.9500 Buy Now
Win Source Electronics MOSFET N-CH 200V 31A D2PAK 6200
  • 3 $16.9570
  • 8 $13.9140
  • 12 $13.4790
  • 16 $13.0440
  • 20 $12.6090
  • 27 $11.3050
$11.3050 / $16.9570 Buy Now

CAD Models for FQB34N20LTM by Fairchild Semiconductor Corporation
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Part Data Attributes for FQB34N20LTM by Fairchild Semiconductor Corporation
Parametric Data

FQB34N20LTM
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, D2PAK-3
Pin Count
2
Manufacturer Package Code
2LD,TO263, SURFACE MOUNT
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
640 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
31 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
Pulsed Drain Current-Max (IDM)
124 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQB34N20LTM
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
    VS

Alternate Parts for FQB34N20LTM

This table gives cross-reference parts and alternative options found for FQB34N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQB34N20LTM Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK, 800-REEL onsemi FQB34N20LTM vs FQB34N20LTM
Part Number Description Manufacturer Compare
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20LTM vs IRFS23N20DTRRP
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20LTM vs IRFS23N20DTRLP
PSMN070-200B,118 N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin NXP Semiconductors FQB34N20LTM vs PSMN070-200B,118
PSMN070-200B/T3 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors FQB34N20LTM vs PSMN070-200B/T3
IRFS23N20DPBF Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier FQB34N20LTM vs IRFS23N20DPBF
IRFS23N20DTRR Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB34N20LTM vs IRFS23N20DTRR
IRFS31N20DTRR Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB34N20LTM vs IRFS31N20DTRR
PSMN070-200B TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors FQB34N20LTM vs PSMN070-200B
PSMN070-200B,118 N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin Nexperia FQB34N20LTM vs PSMN070-200B,118

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