Part Details for FQD1N60CTF by Fairchild Semiconductor Corporation
Overview of FQD1N60CTF by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQD1N60CTF
FQD1N60CTF CAD Models
FQD1N60CTF Part Data Attributes
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FQD1N60CTF
Fairchild Semiconductor Corporation
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Datasheet
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FQD1N60CTF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | LEAD FREE, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 33 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 11.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 28 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQD1N60CTF
This table gives cross-reference parts and alternative options found for FQD1N60CTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD1N60CTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQD1N60CTM | Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, DPAK, 2500-REEL | onsemi | FQD1N60CTF vs FQD1N60CTM |
FQD1N60CTF | 1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FQD1N60CTF vs FQD1N60CTF |
FQD1N60CTM | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FQD1N60CTF vs FQD1N60CTM |