FQD1N60CTF
Description: 1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3

Overview of FQD1N60CTF by Rochester Electronics LLC

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Part Data Attributes for FQD1N60CTF by Rochester Electronics LLC

FQD1N60CTF
Rochester Electronics LLC
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Package Description
LEAD FREE, DPAK-3
Pin Count
3
Reach Compliance Code
unknown
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
33 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
1 A
Drain-source On Resistance-Max
11.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
4 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FQD1N60CTF
    Rochester Electronics LLC
    1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3
    VS

Alternate Parts for FQD1N60CTF

This table gives cross-reference parts and alternative options found for FQD1N60CTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD1N60CTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQD1N60CTF Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD1N60CTF vs FQD1N60CTF
Part Number Description Manufacturer Compare
FQD1N60CTF Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD1N60CTF vs FQD1N60CTF
FQD1N60CTM Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, DPAK, 2500-REEL onsemi FQD1N60CTF vs FQD1N60CTM

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