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Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, DPAK, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AC6370
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Newark | Qfc 600V 11.5Ohm Dpak Rohs Compliant: Yes |Onsemi FQD1N60CTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2420 / $0.2540 | Buy Now |
DISTI #
95W3214
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Newark | Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQD1N60CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
FQD1N60CTM
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Avnet Americas | Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD1N60CTM) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Container: Reel | 2500 |
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RFQ | |
DISTI #
FQD1N60CTM
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Avnet Americas | Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD1N60CTM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 421 Partner Stock |
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RFQ | |
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Rochester Electronics | Power Field-Effect Transistor, 1A, 600V, 11.5ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | Call for Availability |
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$0.2321 / $0.2730 | Buy Now |
DISTI #
FQD1N60CTM
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TME | Transistor: N-MOSFET, unipolar, 600V, 0.6A, 28W, DPAK Min Qty: 1 | 0 |
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$0.3130 / $0.9040 | RFQ |
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FQD1N60CTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD1N60CTM
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, DPAK, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 33 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 11.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 28 W | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQD1N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD1N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQD1N60CTM | 1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FQD1N60CTM vs FQD1N60CTM |