Part Details for FQP19N20C by Fairchild Semiconductor Corporation
Overview of FQP19N20C by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQP19N20C
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 200V, 0.17OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 8 |
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$1.1003 / $1.3203 | Buy Now |
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ComSIT USA | 200 V, 19 A, 170 MILLI OHM N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 800 |
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RFQ |
Part Details for FQP19N20C
FQP19N20C CAD Models
FQP19N20C Part Data Attributes
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FQP19N20C
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQP19N20C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 433 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 76 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP19N20C
This table gives cross-reference parts and alternative options found for FQP19N20C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP19N20C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FQP19N20C vs IPB80N06S2LH5ATMA1 |
NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | FQP19N20C vs NDB706AL |
FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP19N20C vs FDP18N50 |
IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP19N20C vs IRF610B_FP001 |
IPD90N06S4L06ATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | FQP19N20C vs IPD90N06S4L06ATMA1 |
NTP15N40 | 15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | FQP19N20C vs NTP15N40 |
PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | FQP19N20C vs PHD3055L |
F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | FQP19N20C vs F10F6N |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | FQP19N20C vs IXFH12N100F |
STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | FQP19N20C vs STP9NK65Z |