| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP706A | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NK65Z vs NDP706A |
| NDB606BEL | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 42A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NK65Z vs NDB606BEL |
| IXFH68N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP9NK65Z vs IXFH68N20 |
| IRF620B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NK65Z vs IRF620B |
| MTW33N10E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | STP9NK65Z vs MTW33N10E |
| PHB65N06LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 63A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NK65Z vs PHB65N06LT |
| SPB16N50C3ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NK65Z vs SPB16N50C3ATMA1 |
| IPI45N06S4L08AKSA3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STP9NK65Z vs IPI45N06S4L08AKSA3 |
| NP82N055NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power Field-Effect Transistor, 82A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STP9NK65Z vs NP82N055NUG-S18-AY |
| STD16NE10T4 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 16A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STP9NK65Z vs STD16NE10T4 |
Part Details for STP9NK65Z by STMicroelectronics
Results Overview of STP9NK65Z by STMicroelectronics
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
Electronic Manufacturing
STP9NK65Z Information
STP9NK65Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP9NK65Z
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
STP9NK65Z
|
TME | Transistor: N-MOSFET, unipolar, 650V, 6.4A, Idm: 25.6A, 125W Min Qty: 1 | 123 |
|
$0.7300 / $1.4000 | Buy Now |
|
DISTI #
91588575
|
Verical | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 11 Package Multiple: 1 Date Code: 2443 | Americas - 2992 |
|
$0.9981 | Buy Now |
|
DISTI #
94320199
|
Verical | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 1839 | Americas - 27 |
|
$3.4330 | Buy Now |
|
DISTI #
511-STP9NK65Z
|
Mouser Electronics | MOSFETs N-Ch 650 Volt 6.4Amp Zener SuperMESH RoHS: Compliant | 911 |
|
$1.5400 / $3.9800 | Buy Now |
|
DISTI #
E02:0323_11328208
|
Arrow Electronics | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks Date Code: 2443 | Europe - 3000 |
|
$0.5469 / $0.6111 | Buy Now |
|
DISTI #
V79:2366_23869009
|
Arrow Electronics | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube COO: Morocco RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1839 | Americas - 27 |
|
$1.3120 / $3.4330 | Buy Now |
|
|
STMicroelectronics | N-channel 650 V, 1 Ohm typ., 6.4 A SuperMESH Power MOSFET in a TO-220 package COO: Singapore Min Qty: 1 | 0 |
|
$1.7300 / $4.0200 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 34 Weeks | 0 |
|
$3.4500 / $3.4900 | Buy Now |
|
DISTI #
E02:0323_11328208
|
Arrow Electronics | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks Date Code: 2443 | Europe - 3000 |
|
$0.5469 / $0.6111 | Buy Now |
|
DISTI #
V79:2366_23869009
|
Arrow Electronics | Trans MOSFET N-CH 650V 6.4A 3-Pin(3+Tab) TO-220AB Tube COO: Morocco RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 1839 | Americas - 27 |
|
$1.3120 / $3.4330 | Buy Now |
STP9NK65Z CAD Models
-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
STP9NK65Z Part Data Attributes
|
|
STP9NK65Z
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP9NK65Z
STMicroelectronics
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 200 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6.4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Packing Method | Tube | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 25.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP9NK65Z
This table gives cross-reference parts and alternative options found for STP9NK65Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NK65Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP9NK65Z Frequently Asked Questions (FAQ)
-
The maximum operating frequency of the STP9NK65Z is 100 kHz, but it can be operated at higher frequencies with reduced performance.
-
To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm, and to follow the layout guidelines provided in the datasheet.
-
The maximum input voltage that the STP9NK65Z can handle is 65V, but it is recommended to operate the device within the specified input voltage range of 8V to 60V for optimal performance.
-
To protect the STP9NK65Z from overcurrent and overheating, it is recommended to use an external current sense resistor and a thermal monitoring circuit, and to follow the thermal management guidelines provided in the datasheet.
-
Yes, the STP9NK65Z can be used in high-temperature environments up to 150°C, but the device's performance and reliability may be affected at high temperatures, and the maximum operating temperature should be derated accordingly.