Datasheets
FQT1N60CTF_WS by:

N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω, SOT-223 4L, 16000-TAPE REEL

Part Details for FQT1N60CTF_WS by onsemi

Overview of FQT1N60CTF_WS by onsemi

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Price & Stock for FQT1N60CTF_WS

Part # Distributor Description Stock Price Buy
DISTI # 08N9515
Newark 600V, 0.2A, 11.5 Ohm, Nch Mosfet/Tape Reel |Onsemi FQT1N60CTF_WS Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FQT1N60CTF-WS
Avnet Americas Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel 40000
  • 4,000 $0.2888
  • 8,000 $0.2811
  • 16,000 $0.2733
  • 24,000 $0.2656
  • 32,000 $0.2580
$0.2580 / $0.2888 Buy Now
DISTI # FQT1N60CTF-WS
Avnet Asia Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days 0
RFQ

Part Details for FQT1N60CTF_WS

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FQT1N60CTF_WS Part Data Attributes

FQT1N60CTF_WS onsemi
Buy Now Datasheet
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FQT1N60CTF_WS onsemi N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω, SOT-223 4L, 16000-TAPE REEL
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G4
Manufacturer Package Code MA04A
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 11.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQT1N60CTF_WS

This table gives cross-reference parts and alternative options found for FQT1N60CTF_WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT1N60CTF_WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQT1N60CTF-WS Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223, SOT-223 4L, 4000-REEL onsemi FQT1N60CTF_WS vs FQT1N60CTF-WS
Part Number Description Manufacturer Compare
FQT1N60CTF-WS Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223, SOT-223 4L, 4000-REEL onsemi FQT1N60CTF_WS vs FQT1N60CTF-WS

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