Part Details for FQT1N60CTF_WS by onsemi
Overview of FQT1N60CTF_WS by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQT1N60CTF_WS
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08N9515
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Newark | 600V, 0.2A, 11.5 Ohm, Nch Mosfet/Tape Reel |Onsemi FQT1N60CTF_WS Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
FQT1N60CTF-WS
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Avnet Americas | Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 40000 |
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$0.2580 / $0.2888 | Buy Now |
DISTI #
FQT1N60CTF-WS
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Avnet Asia | Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ |
Part Details for FQT1N60CTF_WS
FQT1N60CTF_WS CAD Models
FQT1N60CTF_WS Part Data Attributes
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FQT1N60CTF_WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT1N60CTF_WS
onsemi
N-Channel QFET® MOSFET 600V, 0.2A, 11.5Ω, SOT-223 4L, 16000-TAPE REEL
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Manufacturer Package Code | MA04A | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 11.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQT1N60CTF_WS
This table gives cross-reference parts and alternative options found for FQT1N60CTF_WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT1N60CTF_WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQT1N60CTF-WS | Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223, SOT-223 4L, 4000-REEL | onsemi | FQT1N60CTF_WS vs FQT1N60CTF-WS |