Part Details for FQT7N10L by onsemi
Overview of FQT7N10L by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FQT7N10L
FQT7N10L CAD Models
FQT7N10L Part Data Attributes:
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FQT7N10L
onsemi
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Datasheet
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FQT7N10L
onsemi
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SOT-223, 4 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 6.8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 155 ns | |
| Turn-on Time-Max (ton) | 240 ns |
Alternate Parts for FQT7N10L
This table gives cross-reference parts and alternative options found for FQT7N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT7N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQT7N10LTF_NL | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LTF_NL |
| FQT7N10L99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10L99Z |
| FQT7N10LTF | Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL | onsemi | FQT7N10L vs FQT7N10LTF |
| FQT7N10TF | Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL | onsemi | FQT7N10L vs FQT7N10TF |
| FQT7N10 | Power Field-Effect Transistor | onsemi | FQT7N10L vs FQT7N10 |
| FQT7N10LTF | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LTF |
| FQT7N10LS62Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LS62Z |