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Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK, 5040-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH8781
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Newark | Mosfet, P-Ch, 100V, 6.6A, 150Deg C, 44W Rohs Compliant: Yes |Onsemi FQU8P10TU Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 540 |
|
$0.4320 / $0.9950 | Buy Now |
DISTI #
FQU8P10TU
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Avnet Americas | Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU8P10TU) RoHS: Compliant Min Qty: 2084 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 14136 Partner Stock |
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$0.2976 / $0.3552 | Buy Now |
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Rochester Electronics | FQU8P10 - Power Field-Effect Transistor, 6.6A, 100V, 0.53ohm, P-Channel, MOSFET, TO-251 RoHS: Compliant Status: Obsolete Min Qty: 1 | 43870 |
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$0.3459 / $0.4069 | Buy Now |
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Flip Electronics | Stock, ship today | 14136 |
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$0.2400 | RFQ |
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FQU8P10TU
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU8P10TU
onsemi
Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK, 5040-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | IPAK-3 | |
Manufacturer Package Code | 369AR | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 6.6 A | |
Drain-source On Resistance-Max | 0.53 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 44 W | |
Pulsed Drain Current-Max (IDM) | 26.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQU8P10TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU8P10TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQU8P10TU | P-Channel QFET® MOSFET -100V, -6.6A, 530mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | FQU8P10TU vs FQU8P10TU |
FQU8P10 | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU8P10TU vs FQU8P10 |