Parametric results for: FQU8P10TU under Power Field-Effect Transistors

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Manufacturer Part Number: fqu8p10tu
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FQU8P10TU
onsemi
$0.5848 Yes End Of Life P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 44 W 26.4 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE ONSEMI IPAK-3 369AR not_compliant EAR99 onsemi
FQU8P10TU
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 44 W 26.4 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP IPAK-3 TO251 (IPAK) MOLDED,3 LEAD not_compliant EAR99 TO-251 3 8541.29.00.95
FQU8P10TU
Rochester Electronics LLC
Check for Price Yes Yes Active P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26.4 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 COMMERCIAL NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE ROCHESTER ELECTRONICS LLC IPAK-3 unknown TO-251 3
FQU8P10TU_NL
Fairchild Semiconductor Corporation
Check for Price Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.6 A 530 mΩ 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26.4 A SWITCHING SILICON TO-251 R-PSIP-T3 e3 Not Qualified PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP IN-LINE, R-PSIP-T3 unknown EAR99 TO-251 3