Part Details for FS10SM-16A by Mitsubishi Electric
Overview of FS10SM-16A by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
DC2779A | Analog Devices | LT8644S Demo | 8V, 16A Sync Bu | |
LT8644SIV#TRMPBF | Analog Devices | 8V, 16A Buck Silent Switcher 2 | |
LT8644SIV#TRPBF | Analog Devices | 8V, 16A Buck Silent Switcher 2 |
Part Details for FS10SM-16A
FS10SM-16A CAD Models
FS10SM-16A Part Data Attributes
|
FS10SM-16A
Mitsubishi Electric
Buy Now
Datasheet
|
Compare Parts:
FS10SM-16A
Mitsubishi Electric
Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.98 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FS10SM-16A
This table gives cross-reference parts and alternative options found for FS10SM-16A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS10SM-16A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTW7N80E | 7A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | FS10SM-16A vs MTW7N80E |
2SK896 | TRANSISTOR 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | FS10SM-16A vs 2SK896 |
SSF17N60A | Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | FS10SM-16A vs SSF17N60A |
STW9NA80 | 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FS10SM-16A vs STW9NA80 |
FS10SM-16A | Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Powerex Power Semiconductors | FS10SM-16A vs FS10SM-16A |
2SK2078 | TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FS10SM-16A vs 2SK2078 |
BUZ305 | Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN | Siemens | FS10SM-16A vs BUZ305 |
FS14UM-10 | 14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Renesas Electronics Corporation | FS10SM-16A vs FS14UM-10 |
FS14UM-10 | Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Powerex Power Semiconductors | FS10SM-16A vs FS14UM-10 |
SSH12N80 | Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FS10SM-16A vs SSH12N80 |