Datasheets
FS3VS-9 by:

Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for FS3VS-9 by Mitsubishi Electric

Overview of FS3VS-9 by Mitsubishi Electric

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for FS3VS-9

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FS3VS-9 Part Data Attributes:

FS3VS-9 Mitsubishi Electric
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FS3VS-9 Mitsubishi Electric Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 9 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FS3VS-9

This table gives cross-reference parts and alternative options found for FS3VS-9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS3VS-9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS3VS-9 Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors FS3VS-9 vs FS3VS-9
Part Number Description Manufacturer Compare
2SK1690 Power Field-Effect Transistor, 3A I(D), 450V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN SANYO Electric Co Ltd FS3VS-9 vs 2SK1690
FS3VS-9 Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors FS3VS-9 vs FS3VS-9
FQB3N40 Power Field-Effect Transistor, 2.5A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FS3VS-9 vs FQB3N40
FQB3N40TM Power Field-Effect Transistor, 2.5A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FS3VS-9 vs FQB3N40TM
IRFW710A Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation FS3VS-9 vs IRFW710A

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