Part Details for GB02SLT12-214 by GeneSic Semiconductor Inc
Overview of GB02SLT12-214 by GeneSic Semiconductor Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for GB02SLT12-214
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08X5911
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Newark | Diode, Schottky, 2A, 1.2Kv, Do-214Aa-3, Product Range:1200V Series, Diode Configuration:Single, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:2A, Total Capacitive Charge:14Nc, Diode Case Style:Do-214Aa (Smb) Rohs Compliant: Yes |Genesic Semiconductor GB02SLT12-214 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.3400 | Buy Now |
DISTI #
1242-1170-1-ND
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DigiKey | DIODE SIL CARB 1.2KV 2A DO214AA Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14152 In Stock |
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$2.1500 / $3.2000 | Buy Now |
DISTI #
905-GB02SLT12-214
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Mouser Electronics | SiC Schottky Diodes 1200V 2A Standard RoHS: Compliant | 11633 |
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$2.1400 / $3.2000 | Buy Now |
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Quest Components | RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 2A, 1200V V(RRM) | 5 |
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$3.2000 / $4.8000 | Buy Now |
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NAC | Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 2A DO-214 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$2.3500 / $2.5800 | Buy Now |
Part Details for GB02SLT12-214
GB02SLT12-214 CAD Models
GB02SLT12-214 Part Data Attributes
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GB02SLT12-214
GeneSic Semiconductor Inc
Buy Now
Datasheet
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Compare Parts:
GB02SLT12-214
GeneSic Semiconductor Inc
Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A DO-214; Mounting Style: Surface Mount; Package / Case: DO-214; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 2 A; Forward Voltagen(VF): 1.5 V @ 2 A; Reverse Currentn(IR): 0.2 uA @ 1200 V; Total Capacitive Charge (QC): 8 nC; Capacitancen(C): 127 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 18 A; Power Dissipationn(PD): 39 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | GENESIC SEMICONDUCTOR INC | |
Part Package Code | DO-214 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Application | GENERAL PURPOSE | |
Configuration | SINGLE | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.8 V | |
Non-rep Pk Forward Current-Max | 18 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Operating Temperature-Max | 175 °C | |
Output Current-Max | 2 A | |
Rep Pk Reverse Voltage-Max | 1200 V | |
Surface Mount | YES | |
Technology | SCHOTTKY |
Alternate Parts for GB02SLT12-214
This table gives cross-reference parts and alternative options found for GB02SLT12-214. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GB02SLT12-214, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GB02SLT12-252 | Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 2 A; Forward Voltagen(VF): 1.5 V @ 2 A; Reverse Currentn(IR): 0.2 uA @ 1200 V; Total Capacitive Charge (QC): 8 nC; Capacitancen(C): 127 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 18 A; Power Dissipationn(PD): 93 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C | GeneSic Semiconductor Inc | GB02SLT12-214 vs GB02SLT12-252 |