GS66502B-E01-MR
vs
NRF52840-QIAA-R7
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
GAN SYSTEMS INC
|
NORDIC SEMICONDUCTOR ASA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| Samacsys Manufacturer |
GaN Systems
|
Nordic Semiconductor
|
| Case Connection |
SOURCE
|
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
650 V
|
|
| Drain Current-Max (ID) |
7.5 A
|
|
| Drain-source On Resistance-Max |
0.26 Ω
|
|
| FET Technology |
HIGH ELECTRON MOBILITY
|
|
| Feedback Cap-Max (Crss) |
0.5 pF
|
|
| JESD-30 Code |
R-PBCC-N3
|
S-PBGA-N73
|
| JESD-609 Code |
e4
|
|
| Moisture Sensitivity Level |
3
|
2
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
73
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
85 °C
|
| Operating Temperature-Min |
-55 °C
|
-40 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
CHIP CARRIER
|
GRID ARRAY, HEAT SINK/SLUG
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
15 A
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
GOLD OVER NICKEL
|
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
GALLIUM NITRIDE
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
AQFN-73
|
| Factory Lead Time |
|
20 Weeks
|
| Length |
|
7 mm
|
| Number of Functions |
|
1
|
| Package Code |
|
HLGA
|
| Seated Height-Max |
|
0.85 mm
|
| Supply Voltage-Nom |
|
3 V
|
| Telecom IC Type |
|
TELECOM CIRCUIT
|
| Temperature Grade |
|
INDUSTRIAL
|
| Terminal Pitch |
|
0.5 mm
|
| Width |
|
7 mm
|
|
|
|
Compare GS66502B-E01-MR with alternatives
Compare NRF52840-QIAA-R7 with alternatives