Part Details for GS8672D36BGE-250T by GSI Technology
Overview of GS8672D36BGE-250T by GSI Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SJ625(0)-T1B-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
X9250TS24Z-2.7T1 | Renesas Electronics Corporation | Quad Digitally Controlled Potentiometer (XDCP™) |
Part Details for GS8672D36BGE-250T
GS8672D36BGE-250T CAD Models
GS8672D36BGE-250T Part Data Attributes
|
GS8672D36BGE-250T
GSI Technology
Buy Now
Datasheet
|
Compare Parts:
GS8672D36BGE-250T
GSI Technology
Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GSI TECHNOLOGY | |
Part Package Code | BGA | |
Package Description | LBGA, BGA165,11X15,40 | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINE ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 75497472 bit | |
Memory IC Type | STANDARD SRAM | |
Memory Width | 36 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.5 mm | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 1.29 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 15 mm |
Alternate Parts for GS8672D36BGE-250T
This table gives cross-reference parts and alternative options found for GS8672D36BGE-250T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8672D36BGE-250T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GS8662D36BD-250T | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8672D36BGE-250T vs GS8662D36BD-250T |
K7R643684M-EC250 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | GS8672D36BGE-250T vs K7R643684M-EC250 |
GS8662D36GE-250 | DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8672D36BGE-250T vs GS8662D36GE-250 |
CY7C1515KV18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | GS8672D36BGE-250T vs CY7C1515KV18-250BZC |
GS8672D36BE-250 | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8672D36BGE-250T vs GS8672D36BE-250 |
K7R643684M-FC25T | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | GS8672D36BGE-250T vs K7R643684M-FC25T |
CY7C1515JV18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8672D36BGE-250T vs CY7C1515JV18-250BZC |
IS61QDB42M36A-250M3 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | GS8672D36BGE-250T vs IS61QDB42M36A-250M3 |
GS8662D36BGD-250 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8672D36BGE-250T vs GS8662D36BGD-250 |
GS8672D36BE-250T | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8672D36BGE-250T vs GS8672D36BE-250T |