Datasheets
HFA3127Y by:

RF Small Signal Bipolar Transistor, 0.0155A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for HFA3127Y by Harris Semiconductor

Overview of HFA3127Y by Harris Semiconductor

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Applications Education and Research Consumer Electronics Internet of Things (IoT) Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for HFA3127Y

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HFA3127Y Part Data Attributes:

HFA3127Y Harris Semiconductor
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HFA3127Y Harris Semiconductor RF Small Signal Bipolar Transistor, 0.0155A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description UNCASED CHIP, R-XUUC-N16
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.0155 A
Collector-Emitter Voltage-Max 8 V
Configuration SEPARATE, 5 ELEMENTS
DC Current Gain-Min (hFE) 40
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-XUUC-N16
Number of Elements 5
Number of Terminals 16
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz
VCEsat-Max 0.5 V

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