Part Details for HGT1S12N60A4DS by onsemi
Overview of HGT1S12N60A4DS by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGT1S12N60A4DS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
95B2571
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Newark | Single Igbt, 600V, 54A, Continuous Collector Current:54A, Collector Emitter Saturation Voltage:2V, Power Dissipation:167W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGT1S12N60A4DS Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
HGT1S12N60A4DS
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Avnet Americas | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S12N60A4DS) RoHS: Compliant Min Qty: 225 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 4000 Partner Stock |
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$2.7652 / $3.3004 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 54A, 600V, N-Channel, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 7126 |
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$3.1900 / $3.7500 | Buy Now |
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Flip Electronics | Stock, ship today | 4000 |
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$2.2300 | RFQ |
Part Details for HGT1S12N60A4DS
HGT1S12N60A4DS CAD Models
HGT1S12N60A4DS Part Data Attributes
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HGT1S12N60A4DS
onsemi
Buy Now
Datasheet
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Compare Parts:
HGT1S12N60A4DS
onsemi
600V, SMPS IGBT, 800-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 54 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 95 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 265 ns | |
| Turn-off Time-Nom (toff) | 180 ns | |
| Turn-on Time-Nom (ton) | 33 ns | |
| VCEsat-Max | 2.7 V |
Alternate Parts for HGT1S12N60A4DS
This table gives cross-reference parts and alternative options found for HGT1S12N60A4DS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60A4DS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S12N60A4S | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | HGT1S12N60A4DS vs HGT1S12N60A4S |
| HGT1S12N60A4DS | 600V, SMPS IGBT, 2LD,TO263, SURFACE MOUNT, 800/RAIL | Fairchild Semiconductor Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS |