Part Details for HGT1S12N60A4DS9A by onsemi
Overview of HGT1S12N60A4DS9A by onsemi
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Part Details for HGT1S12N60A4DS9A
HGT1S12N60A4DS9A CAD Models
HGT1S12N60A4DS9A Part Data Attributes
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HGT1S12N60A4DS9A
onsemi
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Datasheet
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HGT1S12N60A4DS9A
onsemi
Insulated Gate Bipolar Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-11-08 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 54 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 95 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 265 ns | |
Turn-off Time-Nom (toff) | 180 ns | |
Turn-on Time-Nom (ton) | 33 ns | |
VCEsat-Max | 2.7 V |