There are no models available for this part yet.
Overview of HGTH20N50C1 by Harris Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for HGTH20N50C1 by Harris Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
2156-HGTH20N50C1-ND
|
DigiKey | 20A, 500V, N-CHANNEL IGBT Min Qty: 45 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4984 In Stock |
|
$6.8100 | Buy Now | |
| Rochester Electronics | 20A, 500V, N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4984 |
|
$5.8500 / $6.8800 | Buy Now |
CAD Models for HGTH20N50C1 by Harris Semiconductor
Part Data Attributes for HGTH20N50C1 by Harris Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Case Connection
|
COLLECTOR
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|
Collector Current-Max (IC)
|
20 A
|
|
Collector-Emitter Voltage-Max
|
500 V
|
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Configuration
|
SINGLE
|
|
Fall Time-Max (tf)
|
500 ns
|
|
Gate-Emitter Thr Voltage-Max
|
4.5 V
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JEDEC-95 Code
|
TO-218AC
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
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Number of Elements
|
1
|
|
Number of Terminals
|
3
|
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Operating Temperature-Max
|
150 °C
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|
Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
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Polarity/Channel Type
|
N-CHANNEL
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|
Power Dissipation Ambient-Max
|
100 W
|
|
Power Dissipation-Max (Abs)
|
100 W
|
|
Qualification Status
|
Not Qualified
|
|
Rise Time-Max (tr)
|
50 ns
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
|
|
Transistor Application
|
POWER CONTROL
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Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
400 ns
|
|
Turn-on Time-Max (ton)
|
50 ns
|
|
VCEsat-Max
|
3.2 V
|