Datasheets
HL6366DG-A by: Ushio Opto Semiconductors Inc

Laser Diode, 642nm,

Part Details for HL6366DG-A by Ushio Opto Semiconductors Inc

Overview of HL6366DG-A by Ushio Opto Semiconductors Inc

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Applications Consumer Electronics Security and Surveillance Internet of Things (IoT) Audio and Video Systems Smart Cities Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for HL6366DG-A

Part # Distributor Description Stock Price Buy
DISTI # HL6366DG-A
Avnet Americas 642nm / 90mW AlGaInP Laser Diode - Trays (Alt: HL6366DG-A) RoHS: Compliant Min Qty: 13 Package Multiple: 1 Lead time: 12 Weeks, 6 Days Container: Tray 0
  • 13 $122.3438
  • 20 $119.7990
  • 30 $116.6670
  • 70 $111.1860
  • 130 $102.9204
  • 650 $95.1802
  • 1,300 $84.8250
$84.8250 / $122.3438 Buy Now

Part Details for HL6366DG-A

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HL6366DG-A Part Data Attributes

HL6366DG-A Ushio Opto Semiconductors Inc
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HL6366DG-A Ushio Opto Semiconductors Inc Laser Diode, 642nm,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer USHIO OPTO SEMICONDUCTORS INC
Reach Compliance Code unknown
Factory Lead Time 12 Weeks, 6 Days
Configuration SINGLE WITH BUILT-IN PHOTO DIODE
Number of Functions 1
Operating Temperature-Max 50 °C
Operating Temperature-Min -10 °C
Optoelectronic Device Type LASER DIODE
Output Power-Nom 90 mW
Peak Wavelength 642 nm
Shape ROUND
Size 1.6 mm
Threshold Current-Max 95 mA

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