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Transistors Power Field-Effect Transistors HUF75321D3S

HUF75321D3S
Description: Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Overview of HUF75321D3S by Fairchild Semiconductor Corporation

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Price & Stock for HUF75321D3S by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   201
RFQ
Rochester Electronics 20A, 55V, 0.036ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 72
  • 1 $0.4323
  • 25 $0.4237
  • 100 $0.4064
  • 500 $0.3891
  • 1,000 $0.3675
$0.3675 / $0.4323 Buy Now

CAD Models for HUF75321D3S by Fairchild Semiconductor Corporation
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Part Data Attributes for HUF75321D3S by Fairchild Semiconductor Corporation
Parametric Data

HUF75321D3S
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.036 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
93 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. HUF75321D3S
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
    VS

Alternate Parts for HUF75321D3S

This table gives cross-reference parts and alternative options found for HUF75321D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3S vs STD30NE06
HUF75321D3S_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3S vs HUF75321D3S_NL
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3S vs HUF75321D3ST_NL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75321D3S vs HUF75321D3S
HUF75321D3ST N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL onsemi HUF75321D3S vs HUF75321D3ST
HUF75321D3S 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3S vs HUF75321D3S
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors HUF75321D3S vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi HUF75321D3S vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi HUF75321D3S vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group HUF75321D3S vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi HUF75321D3S vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation HUF75321D3S vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG HUF75321D3S vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3S vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi HUF75321D3S vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3S vs STD30NE06

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