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Transistors Power Field-Effect Transistors BUK453-60A

BUK453-60A
Description: TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Overview of BUK453-60A by NXP Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
LTM4680IY Analog Devices Dual 30A, Single 60A µM Reg
LTM4680IY#PBF Analog Devices Dual 30A, Single 60A µM Reg
LTM4680EY#PBF Analog Devices Dual 30A, Single 60A µM Reg

CAD Models for BUK453-60A by NXP Semiconductors
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Part Data Attributes for BUK453-60A by NXP Semiconductors
Parametric Data

BUK453-60A
NXP Semiconductors
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
50 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
22 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
160 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
88 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
170 ns
Turn-on Time-Max (ton)
75 ns
Want to compare parts?
  1. BUK453-60A
    NXP Semiconductors
    TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
    VS

Alternate Parts for BUK453-60A

This table gives cross-reference parts and alternative options found for BUK453-60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK453-60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFZ24NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier BUK453-60A vs IRFZ24NPBF
HUF75307P3 Power Field-Effect Transistor, 13A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUK453-60A vs HUF75307P3
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier BUK453-60A vs IRFZ24N
STP20NE06 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUK453-60A vs STP20NE06
BUK453-60B TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BUK453-60A vs BUK453-60B
BUZ71 17A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUK453-60A vs BUZ71
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUK453-60A vs BUZ71
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUK453-60A vs BUZ71
MTP15N05E 15A, 50V, 7.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUK453-60A vs MTP15N05E
IRFZ24N 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB NXP Semiconductors BUK453-60A vs IRFZ24N
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUK453-60A vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation BUK453-60A vs HUF76429D3ST
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier BUK453-60A vs IRFR024NTR
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation BUK453-60A vs 2SJ602-ZJ-AZ
2SJ174 20A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BUK453-60A vs 2SJ174
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUK453-60A vs RFP14N05L
MTD15N06VT4 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUK453-60A vs MTD15N06VT4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUK453-60A vs BUZ71
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUK453-60A vs RFD14N06L
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor BUK453-60A vs HUF75309D3ST

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