HUF75321D3ST
Description: N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL

Overview of HUF75321D3ST by onsemi

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Price & Stock for HUF75321D3ST by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 05B7192
Newark Transistor, mosfet, n-Channel,55V V(Br)Dss,20A I(D),to-252Aa Rohs Compliant: Yes |Onsemi HUF75321D3ST RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4720
  • 3,000 $0.4530
  • 6,000 $0.4110
  • 12,000 $0.3700
  • 18,000 $0.3570
  • 30,000 $0.3480
$0.3480 / $0.4720 Buy Now
DISTI # HUF75321D3STCT-ND
DigiKey MOSFET N-CH 55V 20A TO252AA Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3317
In Stock
  • 1 $1.4200
  • 10 $0.8410
  • 100 $0.5037
  • 500 $0.4538
  • 1,000 $0.4251
  • 2,500 $0.3800
  • 5,000 $0.3521
  • 7,500 $0.3425
$0.3425 / $1.4200 Buy Now
DISTI # HUF75321D3ST
Avnet Americas Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 913 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 10982 Partner Stock
  • 913 $0.4055
  • 920 $0.3946
  • 1,900 $0.3836
  • 4,600 $0.3726
  • 9,200 $0.3617
  • 46,000 $0.3507
  • 92,000 $0.3398
$0.3398 / $0.4055 Buy Now
DISTI # HUF75321D3ST
Avnet Americas Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 1786 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 1921 Partner Stock
RFQ
DISTI # 512-HUF75321D3ST
Mouser Electronics MOSFETs 20a 55V N-Channel UltraFET RoHS: Compliant 2519
  • 1 $0.7500
  • 10 $0.5880
  • 100 $0.4200
  • 500 $0.3920
$0.3920 / $0.7500 Buy Now
Future Electronics N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel 0
Reel
  • 2,500 $0.3600
  • 5,000 $0.3550
  • 7,500 $0.3500
  • 10,000 $0.3450
  • 12,500 $0.3350
$0.3350 / $0.3600 Buy Now
Future Electronics N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel 0
Reel
  • 2,500 $0.3600
  • 5,000 $0.3550
  • 7,500 $0.3500
  • 10,000 $0.3450
  • 12,500 $0.3350
$0.3350 / $0.3600 Buy Now
Onlinecomponents.com N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ RoHS: Compliant 0
  • 2,500 $0.3558
  • 5,000 $0.3468
  • 7,500 $0.3416
  • 10,000 $0.3365
  • 15,000 $0.3315
  • 25,000 $0.3265
$0.3265 / $0.3558 Buy Now
Rochester Electronics HUF75321D3 - Power Field-Effect Transistor, 20A, 55V, 0.036ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 10982
  • 1 $0.3996
  • 25 $0.3916
  • 100 $0.3756
  • 500 $0.3596
  • 1,000 $0.3397
$0.3397 / $0.3996 Buy Now
DISTI # HUF75321D3ST
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3400
$0.3400 Buy Now
DISTI # HUF75321D3ST
Avnet Silica Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S541901513092
Chip1Stop Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) TO-252AA T/R RoHS: Compliant 30000
  • 2,500 $0.3920
  • 5,000 $0.3890
  • 10,000 $0.3830
  • 20,000 $0.3770
$0.3770 / $0.3920 Buy Now
DISTI # C1S541901554929
Chip1Stop Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) TO-252AA T/R RoHS: Compliant 2250
  • 1 $0.5840
  • 10 $0.4530
  • 25 $0.4505
  • 100 $0.3744
  • 250 $0.3706
  • 500 $0.3680
$0.3680 / $0.5840 Buy Now
DISTI # HUF75321D3ST
EBV Elektronik Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 1921
RFQ

CAD Models for HUF75321D3ST by onsemi
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Part Data Attributes for HUF75321D3ST by onsemi

HUF75321D3ST
onsemi
-
-
Pbfree Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ONSEMI
Package Description
TO-252AA, 3 PIN
Manufacturer Package Code
369AS
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.036 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
93 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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    N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL
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Alternate Parts for HUF75321D3ST

This table gives cross-reference parts and alternative options found for HUF75321D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3ST vs STD30NE06
HUF75321D3S_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3S_NL
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3ST_NL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75321D3ST vs HUF75321D3S
HUF75321D3S 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3ST vs HUF75321D3S
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors HUF75321D3ST vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi HUF75321D3ST vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi HUF75321D3ST vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group HUF75321D3ST vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi HUF75321D3ST vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation HUF75321D3ST vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG HUF75321D3ST vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3ST vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi HUF75321D3ST vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3ST vs STD30NE06

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