Part Details for HUF76639S3ST by Fairchild Semiconductor Corporation
Overview of HUF76639S3ST by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF76639S3ST
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 589 |
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RFQ | ||
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Quest Components | 471 |
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$1.2118 / $2.9376 | Buy Now |
Part Details for HUF76639S3ST
HUF76639S3ST CAD Models
HUF76639S3ST Part Data Attributes
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HUF76639S3ST
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HUF76639S3ST
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 51 A | |
Drain-source On Resistance-Max | 0.027 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF76639S3ST
This table gives cross-reference parts and alternative options found for HUF76639S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76639S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF76639S3ST | 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | HUF76639S3ST vs HUF76639S3ST |
HUF76639S3S | 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | HUF76639S3ST vs HUF76639S3S |
HUF76639S3S | 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Rochester Electronics LLC | HUF76639S3ST vs HUF76639S3S |
HUF76639S3ST | N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ, 800-REEL | onsemi | HUF76639S3ST vs HUF76639S3ST |
HUF76639S3S | Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | HUF76639S3ST vs HUF76639S3S |