Datasheets
HUF76639S3ST by:

N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ, 800-REEL

Part Details for HUF76639S3ST by onsemi

Overview of HUF76639S3ST by onsemi

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Price & Stock for HUF76639S3ST

Part # Distributor Description Stock Price Buy
DISTI # 82C5653
Newark Transistor, mosfet, n-Channel,100V V(Br)Dss,50A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF76639S3ST RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.2500
  • 3,000 $1.1800
  • 6,000 $1.1200
  • 12,000 $1.0100
  • 18,000 $0.9670
  • 30,000 $0.9300
$0.9300 / $1.2500 Buy Now
DISTI # HUF76639S3STFSCT-ND
DigiKey MOSFET N-CH 100V 51A D2PAK Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1
In Stock
  • 1 $2.9300
  • 10 $1.9020
  • 100 $1.3157
  • 800 $1.0184
  • 1,600 $0.9456
  • 2,400 $0.9299
$0.9299 / $2.9300 Buy Now
DISTI # HUF76639S3ST
Avnet Americas Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) TO-263AB T/R - Tape and Reel (Alt: HUF76639S3ST) RoHS: Compliant Min Qty: 337 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 690 Partner Stock
RFQ
DISTI # HUF76639S3ST
Avnet Americas Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) TO-263AB T/R - Tape and Reel (Alt: HUF76639S3ST) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Reel 36800 Factory Stock
  • 800 $0.8090
$0.8090 Buy Now
DISTI # 512-HUF76639S3ST
Mouser Electronics MOSFETs 50A 100V 0.026 Ohm Logic Level N-Ch RoHS: Compliant 1147
  • 1 $2.5500
  • 10 $1.9700
  • 100 $1.4600
  • 250 $1.3600
  • 800 $1.0700
$1.0700 / $2.5500 Buy Now
Future Electronics 100 V 51 A 180 W Surface Mount N-Channel TO-263 (D2PAK) RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 6 Weeks Container: Reel 2400
Reel
  • 800 $0.9450
  • 1,600 $0.9250
  • 2,400 $0.9100
  • 3,200 $0.9050
  • 4,000 $0.8750
$0.8750 / $0.9450 Buy Now
Onlinecomponents.com N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ RoHS: Compliant 0
  • 800 $0.9770
  • 1,600 $0.9270
  • 3,200 $0.9130
  • 5,600 $0.9000
  • 8,000 $0.8860
$0.8860 / $0.9770 Buy Now
Rochester Electronics Power Field-Effect Transistor, 51A, 100V, 0.027ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 690
  • 1 $1.0800
  • 25 $1.0600
  • 100 $1.0200
  • 500 $0.9764
  • 1,000 $0.9222
$0.9222 / $1.0800 Buy Now
DISTI # HUF76639S3ST
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $0.9300
$0.9300 Buy Now
DISTI # HUF76639S3ST
Avnet Asia Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) TO-263AB T/R (Alt: HUF76639S3ST) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days 0
  • 800 $0.9788
  • 1,600 $0.9661
  • 2,400 $0.9537
  • 4,000 $0.9416
  • 8,000 $0.9184
  • 20,000 $0.8963
  • 40,000 $0.8752
$0.8752 / $0.9788 Buy Now
DISTI # HUF76639S3ST
Avnet Silica (Alt: HUF76639S3ST) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
DISTI # HUF76639S3ST
EBV Elektronik (Alt: HUF76639S3ST) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 37600
RFQ

Part Details for HUF76639S3ST

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HUF76639S3ST Part Data Attributes

HUF76639S3ST onsemi
Buy Now Datasheet
Compare Parts:
HUF76639S3ST onsemi N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 51 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76639S3ST

This table gives cross-reference parts and alternative options found for HUF76639S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76639S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HUF76639S3ST vs IRL2910STRLPBF

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