Datasheets
IGB20N60H3ATMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IGB20N60H3ATMA1 by Infineon Technologies AG

Overview of IGB20N60H3ATMA1 by Infineon Technologies AG

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Price & Stock for IGB20N60H3ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0264
Newark Igbt, 600V, 40A, 175Deg C, 170W, Continuous Collector Current:40A, Collector Emitter Saturation Voltage:1.95V, Power Dissipation:170W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IGB20N60H3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1277
  • 1 $0.7150
  • 10 $0.7150
  • 25 $0.7150
  • 50 $0.7150
  • 100 $0.7150
  • 250 $0.7150
  • 500 $0.7150
$0.7150 Buy Now
DISTI # IGB20N60H3ATMA1CT-ND
DigiKey IGBT TRENCH FS 600V 40A TO263-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1956
In Stock
  • 1 $1.7900
  • 10 $1.4890
  • 100 $1.1849
  • 500 $1.0026
  • 1,000 $0.8507
  • 2,000 $0.8081
  • 5,000 $0.7778
  • 10,000 $0.7520
$0.7520 / $1.7900 Buy Now
DISTI # IGB20N60H3ATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB20N60H3ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9325
$0.9325 Buy Now
DISTI # 49AC0264
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0264) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Ammo Pack 124 Partner Stock
  • 1 $2.0100
  • 10 $1.6600
  • 25 $1.5600
  • 50 $1.4500
  • 100 $1.3300
$1.3300 / $2.0100 Buy Now
Future Electronics 600 V, 20 A IGBT3 in TO263 D2Pak package RoHS: Compliant pbFree: No Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.8200
  • 2,000 $0.8050
  • 3,000 $0.7950
  • 4,000 $0.7850
  • 5,000 $0.7650
$0.7650 / $0.8200 Buy Now
DISTI # IGB20N60H3ATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB20N60H3ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9325
$0.9325 Buy Now
DISTI # 49AC0264
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0264) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Ammo Pack 124 Partner Stock
  • 1 $2.0100
  • 10 $1.6600
  • 25 $1.5600
  • 50 $1.4500
  • 100 $1.3300
$1.3300 / $2.0100 Buy Now
DISTI # IGB20N60H3
TME Transistor: IGBT, 600V, 20A, 170W, D2PAK Min Qty: 1 0
  • 1 $1.8700
  • 5 $1.7000
  • 25 $1.5700
  • 100 $1.4800
$1.4800 / $1.8700 RFQ
Ameya Holding Limited IGBT 600V 40A 170W TO263-3 455
RFQ
DISTI # IGB20N60H3ATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB20N60H3ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9325
$0.9325 Buy Now
DISTI # 49AC0264
Avnet Americas Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0264) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Ammo Pack 124 Partner Stock
  • 1 $2.0100
  • 10 $1.6600
  • 25 $1.5600
  • 50 $1.4500
  • 100 $1.3300
$1.3300 / $2.0100 Buy Now
DISTI # SP000852232
EBV Elektronik Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 (Alt: SP000852232) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 2 Days EBV - 0
Buy Now
DISTI # 2839419
element14 Asia-Pacific IGBT, SINGLE, 600V, 40A, TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape 1153
  • 1 $2.0068
  • 10 $1.6699
  • 100 $1.2231
  • 500 $1.1133
  • 1,000 $0.9082
  • 5,000 $0.8789
$0.8789 / $2.0068 Buy Now
DISTI # 2839419RL
element14 Asia-Pacific IGBT, SINGLE, 600V, 40A, TO-263 RoHS: Compliant Min Qty: 100 Container: Reel 1153
  • 100 $1.2231
  • 500 $1.1133
  • 1,000 $0.9082
  • 5,000 $0.8789
$0.8789 / $1.2231 Buy Now
DISTI # 2839419RL
Farnell IGBT, SINGLE, 600V, 40A, TO-263 RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel 1153
  • 100 $1.1619
  • 500 $1.0607
  • 1,000 $0.9108
$0.9108 / $1.1619 Buy Now
DISTI # 2839419
Farnell IGBT, SINGLE, 600V, 40A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Cut Tape 1153
  • 1 $2.1739
  • 10 $1.6242
  • 100 $1.1619
  • 500 $1.0607
  • 1,000 $0.9108
$0.9108 / $2.1739 Buy Now

Part Details for IGB20N60H3ATMA1

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IGB20N60H3ATMA1 Part Data Attributes

IGB20N60H3ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IGB20N60H3ATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 1 Day
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 241 ns
Turn-on Time-Nom (ton) 31 ns

Alternate Parts for IGB20N60H3ATMA1

This table gives cross-reference parts and alternative options found for IGB20N60H3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGB20N60H3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IGB20N60H3 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IGB20N60H3ATMA1 vs IGB20N60H3
Part Number Description Manufacturer Compare
IXSH30N60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IGB20N60H3ATMA1 vs IXSH30N60
IRGPC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IGB20N60H3ATMA1 vs IRGPC30FD2
APT12GT60KR Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Microsemi Corporation IGB20N60H3ATMA1 vs APT12GT60KR
IRG4PC40SPBF Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG IGB20N60H3ATMA1 vs IRG4PC40SPBF
IRG4PC40KD Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IGB20N60H3ATMA1 vs IRG4PC40KD
HGT1S12N60C3R Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor IGB20N60H3ATMA1 vs HGT1S12N60C3R
GT8Q101 TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IGB20N60H3ATMA1 vs GT8Q101
IRG4BC15UDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IGB20N60H3ATMA1 vs IRG4BC15UDPBF
SGP6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IGB20N60H3ATMA1 vs SGP6N60UFD
IRG4BC30U-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 International Rectifier IGB20N60H3ATMA1 vs IRG4BC30U-S

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