Part Details for IRG4BC15UDPBF by Infineon Technologies AG
Overview of IRG4BC15UDPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4BC15UDPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRG4BC15 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 626 |
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$0.8678 / $1.0200 | Buy Now |
Part Details for IRG4BC15UDPBF
IRG4BC15UDPBF CAD Models
IRG4BC15UDPBF Part Data Attributes:
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IRG4BC15UDPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRG4BC15UDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA FAST SOFT RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 14 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 120 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 49 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 400 ns | |
Turn-on Time-Nom (ton) | 37 ns |
Alternate Parts for IRG4BC15UDPBF
This table gives cross-reference parts and alternative options found for IRG4BC15UDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC15UDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRG4BC15UD | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRG4BC15UDPBF vs IRG4BC15UD |
IRG4BC15UD | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRG4BC15UDPBF vs IRG4BC15UD |