Part Details for IGC18T120T8QX1SA1 by Infineon Technologies AG
Results Overview of IGC18T120T8QX1SA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
IGC18T120T8QX1SA1 Information
IGC18T120T8QX1SA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IGC18T120T8QX1SA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IGC18T120T8QX1SA1-ND
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DigiKey | IGBT TRENCH FIELD STOP 1200V DIE Lead time: 98 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
IGC18T120T8QX1SA1
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC18T120T8QX1SA1) COO: Austria RoHS: Compliant Min Qty: 13590 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
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$2.3585 / $2.6227 | Buy Now |
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DISTI #
SP000987024
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EBV Elektronik | IGBT CHIPS (Alt: SP000987024) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Active | 3503 |
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RFQ |
Part Details for IGC18T120T8QX1SA1
IGC18T120T8QX1SA1 CAD Models
IGC18T120T8QX1SA1 Part Data Attributes
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IGC18T120T8QX1SA1
Infineon Technologies AG
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Datasheet
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IGC18T120T8QX1SA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | , | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | Single | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUUC-N2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Uncased Chip | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Surface Mount | Yes | |
| Terminal Form | No Lead | |
| Terminal Position | Upper | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Power Control | |
| Transistor Element Material | Silicon | |
| VCEsat-Max | 2.42 V |
IGC18T120T8QX1SA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IGC18T120T8QX1SA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
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Proper thermal management is crucial for the IGC18T120T8QX1SA1. Ensure good heat dissipation by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and apply a thin layer of thermal interface material (TIM) between the module and heat sink. Additionally, maintain good airflow around the heat sink and avoid blocking the airflow paths.
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The recommended gate resistor value for the IGC18T120T8QX1SA1 is between 10 Ω to 20 Ω. This value helps to reduce electromagnetic interference (EMI) and ensures reliable switching performance. However, the optimal gate resistor value may vary depending on the specific application and circuit design.
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Yes, the IGC18T120T8QX1SA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current. Additionally, the thermal management system must be capable of handling the increased heat generation.
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The maximum allowable voltage transient for the IGC18T120T8QX1SA1 is ±10% of the DC bus voltage. Exceeding this limit may cause damage to the module or affect its reliability. It's essential to implement proper voltage transient protection measures, such as snubber circuits or voltage clamping devices, to ensure the module's safe operation.