Datasheets
IKP15N60T by:

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IKP15N60T by Infineon Technologies AG

Overview of IKP15N60T by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IKP15N60T

Part # Distributor Description Stock Price Buy
DISTI # 726-IKP15N60T
Mouser Electronics IGBT Transistors LOW LOSS DuoPack 600V 15A RoHS: Compliant 0
  • 1 $1.9000
  • 10 $1.5600
  • 100 $1.2800
  • 500 $1.0400
  • 1,000 $0.9000
  • 5,000 $0.8660
$0.8660 / $1.9000 Order Now
DISTI # IKP15N60T
TME Transistor: IGBT, 600V, 15A, 130W, TO220-3 Min Qty: 1 216
  • 1 $1.8900
  • 5 $1.6400
  • 25 $1.3700
  • 100 $1.2700
  • 500 $1.1300
$1.1300 / $1.8900 Buy Now
Chip1Cloud IGBT 600V 30A 130W TO220-3 12136
RFQ
CHIPMALL.COM LIMITED TO-220 IGBTs ROHS 453
  • 5 $1.4973
  • 50 $1.1259
  • 150 $0.9943
  • 500 $0.9359
  • 2,500 $0.9110
$0.9110 / $1.4973 Buy Now
Chips Pulse Industry Limited TO-220-3 IGBTs RoHS Purchase Online, Ship Immediately 543
  • 50 $1.0340
  • 100 $0.9131
  • 500 $0.8595
  • 1,000 $0.8366
$0.8366 / $1.0340 Buy Now
LCSC TO-220 IGBTs ROHS 453
  • 1 $1.5279
  • 10 $1.3205
  • 50 $1.1489
  • 100 $1.0146
  • 500 $0.9550
  • 1,000 $0.9296
$0.9296 / $1.5279 Buy Now
Perfect Parts Corporation   17415
RFQ

Part Details for IKP15N60T

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IKP15N60T Part Data Attributes

IKP15N60T Infineon Technologies AG
Buy Now Datasheet
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IKP15N60T Infineon Technologies AG Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH SPEED
Case Connection COLLECTOR
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 291 ns
Turn-on Time-Nom (ton) 32 ns

Alternate Parts for IKP15N60T

This table gives cross-reference parts and alternative options found for IKP15N60T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKP15N60T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IKP15N60TXKSA1 Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IKP15N60T vs IKP15N60TXKSA1
Part Number Description Manufacturer Compare
IXSH30N60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IKP15N60T vs IXSH30N60
IRGPC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IKP15N60T vs IRGPC30FD2
APT12GT60KR Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Microsemi Corporation IKP15N60T vs APT12GT60KR
IRG4PC40SPBF Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG IKP15N60T vs IRG4PC40SPBF
IRG4PC40KD Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IKP15N60T vs IRG4PC40KD
HGT1S12N60C3R Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor IKP15N60T vs HGT1S12N60C3R
GT8Q101 TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IKP15N60T vs GT8Q101
IRG4BC15UDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IKP15N60T vs IRG4BC15UDPBF
SGP6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IKP15N60T vs SGP6N60UFD
IRG4BC30U-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 International Rectifier IKP15N60T vs IRG4BC30U-S

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