Part Details for IKP15N60TXKSA1 by Infineon Technologies AG
Overview of IKP15N60TXKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IKP15N60TXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
61M6728
|
Newark | Igbt, Single, 600V, 30A, To-220, Continuous Collector Current:30A, Collector Emitter Saturation Voltage:2.05V, Power Dissipation:130W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKP15N60TXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 5869 |
|
$0.9430 / $2.2300 | Buy Now |
|
DISTI #
448-IKP15N60TXKSA1-ND
|
DigiKey | IGBT 600V 30A 130W TO220-3 Min Qty: 1 Lead time: 22 Weeks Container: Tube | Temporarily Out of Stock |
|
$0.8376 / $2.0000 | Buy Now |
|
DISTI #
IKP15N60TXKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IKP15N60TXKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
|
$1.0387 | Buy Now |
|
DISTI #
E02:0323_01884440
|
Arrow Electronics | Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Date Code: 2412 | Europe - 2690 |
|
$0.8987 | Buy Now |
|
DISTI #
V99:2348_06383221
|
Arrow Electronics | Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Date Code: 2232 | Americas - 2619 |
|
$0.9428 / $1.6335 | Buy Now |
|
|
Future Electronics | IKP15N60T Series 600 V 26 A Through Hole IGBT TrenchStop™ Series - PG-TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 500Tube |
|
$0.8850 / $1.1100 | Buy Now |
|
DISTI #
79638753
|
Verical | Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 7 Package Multiple: 1 Date Code: 2412 | Americas - 2688 |
|
$1.5366 | Buy Now |
|
DISTI #
64985035
|
Verical | Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 7 Package Multiple: 1 Date Code: 2232 | Americas - 2619 |
|
$0.9428 / $1.6335 | Buy Now |
|
DISTI #
71241025
|
Verical | Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube Min Qty: 22 Package Multiple: 1 Date Code: 2322 | Americas - 1996 |
|
$1.1225 / $1.4875 | Buy Now |
|
DISTI #
IKP15N60TXKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IKP15N60TXKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
|
$1.0387 | Buy Now |
Part Details for IKP15N60TXKSA1
IKP15N60TXKSA1 CAD Models
IKP15N60TXKSA1 Part Data Attributes
|
|
IKP15N60TXKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IKP15N60TXKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 291 ns | |
| Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for IKP15N60TXKSA1
This table gives cross-reference parts and alternative options found for IKP15N60TXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKP15N60TXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXSH30N60 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IKP15N60TXKSA1 vs IXSH30N60 |
| IRGPC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IKP15N60TXKSA1 vs IRGPC30FD2 |
| APT12GT60KR | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Microsemi Corporation | IKP15N60TXKSA1 vs APT12GT60KR |
| IRG4PC40SPBF | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | IKP15N60TXKSA1 vs IRG4PC40SPBF |
| IRG4PC40KD | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IKP15N60TXKSA1 vs IRG4PC40KD |
| HGT1S12N60C3R | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Harris Semiconductor | IKP15N60TXKSA1 vs HGT1S12N60C3R |
| GT8Q101 | TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IKP15N60TXKSA1 vs GT8Q101 |
| IRG4BC15UDPBF | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IKP15N60TXKSA1 vs IRG4BC15UDPBF |
| SGP6N60UFD | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | IKP15N60TXKSA1 vs SGP6N60UFD |
| IRG4BC30U-S | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 | International Rectifier | IKP15N60TXKSA1 vs IRG4BC30U-S |