Part Details for INA180B4IDBVT by Texas Instruments
Results Overview of INA180B4IDBVT by Texas Instruments
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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INA180B4IDBVT Information
INA180B4IDBVT by Texas Instruments is an Operational Amplifier.
Operational Amplifiers are under the broader part category of Amplifier Circuits.
Amplifier circuits use external power to increase the amplitude of an input signal. They can be used to perform linear amplifications or logarithmic functions. Read more about Amplifier Circuits on our Amplifier Circuits part category page.
Price & Stock for INA180B4IDBVT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-51128-1-ND
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DigiKey | IC OP AMP 1CH SOT-23-5 Min Qty: 1 Container: Cut Tape |
272 Cut Tape |
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$0.5281 / $0.9300 | Buy Now |
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DISTI #
296-51128-2-ND
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DigiKey | IC OP AMP 1CH SOT-23-5 Min Qty: 250 Container: Tape & Reel |
272 Tape & Reel |
|
$0.4935 | Buy Now |
US Tariff Estimator: INA180B4IDBVT by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
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INA180B4IDBVT Part Data Attributes
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INA180B4IDBVT
Texas Instruments
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Datasheet
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INA180B4IDBVT
Texas Instruments
Operational Amplifier, 1 Func, 150uV Offset-Max, BIMOS, PDSO5
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.33.00.01 | |
| Amplifier Type | Operational Amplifier | |
| Architecture | Voltage-Feedback | |
| Common Mode Voltage-Max | 26 V | |
| Common-mode Reject Ratio-Min | 84 Db | |
| Common-mode Reject Ratio-Nom | 100 Db | |
| Frequency Compensation | Yes | |
| Input Offset Voltage-Max | 150 µV | |
| JESD-30 Code | R-PDSO-G5 | |
| JESD-609 Code | e3 | |
| Length | 2.9 Mm | |
| Low-Bias | No | |
| Low-Offset | Yes | |
| Micropower | Yes | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Code | LSSOP | |
| Package Equivalence Code | TSOP5/6,.11,37 | |
| Package Shape | Rectangular | |
| Package Style | Small Outline, Low Profile, Shrink Pitch | |
| Packing Method | Tr, 7 Inch | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power | No | |
| Programmable Power | No | |
| Seated Height-Max | 1.45 Mm | |
| Slew Rate-Nom | 2 V/Us | |
| Supply Current-Max | 0.3 Ma | |
| Supply Voltage Limit-Max | 6 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | Yes | |
| Technology | Bimos | |
| Temperature Grade | Automotive | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Pitch | 0.95 Mm | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Unity Gain BW-Nom | 350 | |
| Voltage Gain-Min | 200 | |
| Voltage Gain-Nom | 200 | |
| Wideband | No | |
| Width | 1.6 Mm |
INA180B4IDBVT Frequently Asked Questions (FAQ)
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The maximum power dissipation of the INA180B4IDBVT is 670mW at 25°C, but it can be derated to 500mW at 85°C.
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The gain of the INA180B4IDBVT can be calculated using the formula: Gain = (Rgain / Rfb) x (1 + (Rf / Rg)), where Rgain is the gain resistor, Rfb is the feedback resistor, Rf is the feedback resistor, and Rg is the gain-setting resistor.
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The input impedance of the INA180B4IDBVT is typically around 10GΩ, but it can vary depending on the specific application and operating conditions.
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Yes, the INA180B4IDBVT is suitable for high-frequency applications up to 1.5MHz, but the bandwidth may be limited by the gain and the output load.
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To optimize performance with the INA180B4IDBVT, it's recommended to use a 4-layer PCB with a solid ground plane, keep the input and output traces short and symmetrical, and use a low-ESR capacitor for decoupling.