Part Details for IPB160N04S4LH1ATMA1 by Infineon Technologies AG
Results Overview of IPB160N04S4LH1ATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IPB160N04S4LH1ATMA1 Information
IPB160N04S4LH1ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB160N04S4LH1ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB160N04S4LH1ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 160A TO263-7 Min Qty: 1 Lead time: 9 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1895 In Stock |
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$1.0351 / $3.2800 | Buy Now |
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DISTI #
IPB160N04S4LH1ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB160N04S4LH1ATMA1) COO: United States of America (the) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.9888 / $1.0094 | Buy Now |
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DISTI #
726-IPB160N04S4LH1AT
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Mouser Electronics | MOSFETs N-CHANNEL 30/40V RoHS: Compliant | 764 |
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$1.0300 / $2.8400 | Buy Now |
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DISTI #
92044348
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Verical | Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Date Code: 2528 | Americas - 20000 |
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$1.1749 / $1.4651 | Buy Now |
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DISTI #
85995584
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Verical | Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 213 Package Multiple: 1 Date Code: 2101 | Americas - 2953 |
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$1.0928 / $1.7625 | Buy Now |
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DISTI #
91970054
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Verical | Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Date Code: 2540 | Americas - 1000 |
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$1.1239 / $1.3772 | Buy Now |
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DISTI #
85985522
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Verical | Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 213 Package Multiple: 1 Date Code: 2001 | Americas - 308 |
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$1.0928 / $1.7625 | Buy Now |
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Rochester Electronics | IPB160N04S - OptiMOS T2, 40V Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 3261 |
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$0.8742 / $1.4100 | Buy Now |
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DISTI #
SP000979640
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EBV Elektronik | Trans MOSFET NCH 40V 160A 7Pin TO263 TR (Alt: SP000979640) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB160N04S4LH1ATMA1
IPB160N04S4LH1ATMA1 CAD Models
IPB160N04S4LH1ATMA1 Part Data Attributes
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IPB160N04S4LH1ATMA1
Infineon Technologies AG
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Datasheet
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IPB160N04S4LH1ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Avalanche Energy Rating (Eas) | 400 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 640 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Element Material | Silicon |
Alternate Parts for IPB160N04S4LH1ATMA1
This table gives cross-reference parts and alternative options found for IPB160N04S4LH1ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB160N04S4LH1ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB160N04S4H1ATMA1 | Infineon Technologies AG | $1.4163 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | IPB160N04S4LH1ATMA1 vs IPB160N04S4H1ATMA1 |
| IPB160N04S4L-H1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, | IPB160N04S4LH1ATMA1 vs IPB160N04S4L-H1 |
| IPB160N04S4-H1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | IPB160N04S4LH1ATMA1 vs IPB160N04S4-H1 |
IPB160N04S4LH1ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB160N04S4LH1ATMA1 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and heat sink.
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The recommended gate resistor value for IPB160N04S4LH1ATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
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Yes, IPB160N04S4LH1ATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the MOSFET is properly driven and cooled to prevent overheating.
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To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.