Part Details for IPB180N04S4LH0ATMA1 by Infineon Technologies AG
Results Overview of IPB180N04S4LH0ATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB180N04S4LH0ATMA1 Information
IPB180N04S4LH0ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB180N04S4LH0ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB180N04S4LH0ATMA1-ND
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DigiKey | MOSFET N-CH 40V 180A TO263-7 Min Qty: 1000 Lead time: 9 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.3755 / $1.3825 | Buy Now |
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DISTI #
IPB180N04S4LH0ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N04S4LH0ATMA1) COO: United States of America (the) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 9 Weeks, 0 Days Container: Tape & Reel | 0 |
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$1.1340 / $1.2131 | Buy Now |
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DISTI #
726-IPB180N04S4LH0AT
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Mouser Electronics | MOSFETs N-CHANNEL 30/40V RoHS: Compliant | 472 |
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$1.3700 / $4.0700 | Buy Now |
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DISTI #
85989268
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 218 Package Multiple: 1 Date Code: 2201 | Americas - 413 |
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$1.4500 / $1.7250 | Buy Now |
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Rochester Electronics | IPB180N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 464 |
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$1.1600 / $1.4500 | Buy Now |
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DISTI #
85989268
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 218 Package Multiple: 1 Date Code: 2201 | Americas - 413 |
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$1.4500 / $1.7250 | Buy Now |
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DISTI #
85989268
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 RoHS: Exempt Min Qty: 218 Package Multiple: 1 Date Code: 2201 | Americas - 413 |
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$1.4500 / $1.7250 | Buy Now |
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DISTI #
SP000979636
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EBV Elektronik | Trans MOSFET NCH 40V 180A 7Pin TO263 TR (Alt: SP000979636) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB180N04S4LH0ATMA1
IPB180N04S4LH0ATMA1 CAD Models
IPB180N04S4LH0ATMA1 Part Data Attributes
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IPB180N04S4LH0ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB180N04S4LH0ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Green, Plastic, To-263, 7/6 Pin | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Element Material | Silicon |
Alternate Parts for IPB180N04S4LH0ATMA1
This table gives cross-reference parts and alternative options found for IPB180N04S4LH0ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N04S4LH0ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB180N04S4L-H0 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 180A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN | IPB180N04S4LH0ATMA1 vs IPB180N04S4L-H0 |
IPB180N04S4LH0ATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IPB180N04S4LH0ATMA1 is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
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The maximum current rating of the IPB180N04S4LH0ATMA1 is 180 A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the IPB180N04S4LH0ATMA1 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used. Additionally, a fuse or circuit breaker can be used to prevent damage from excessive current.
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The recommended gate drive voltage for the IPB180N04S4LH0ATMA1 is between 10 V and 15 V, as specified in the datasheet. A higher gate drive voltage can improve switching performance, but may also increase power consumption.