Part Details for IPD090N03LGBTMA1 by Infineon Technologies AG
Overview of IPD090N03LGBTMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD090N03LGBTMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD090N03LGBTMA1-ND
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DigiKey | MOSFET N-CH 30V 40A TO252-3 Min Qty: 2500 Lead time: 20 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$0.2079 / $0.2394 | Buy Now |
DISTI #
SP000236950
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EBV Elektronik | Trans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R (Alt: SP000236950) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 71 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD090N03LGBTMA1
IPD090N03LGBTMA1 CAD Models
IPD090N03LGBTMA1 Part Data Attributes
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IPD090N03LGBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD090N03LGBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 40 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD090N03LGBTMA1
This table gives cross-reference parts and alternative options found for IPD090N03LGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD090N03LGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD090N03LGE8177 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD090N03LGBTMA1 vs IPD090N03LGE8177 |