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Part Details for IPD35N10S3L26ATMA1 by Infineon Technologies AG
Overview of IPD35N10S3L26ATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD35N10S3L26ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y2034
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Newark | Mosfet Transistor, n Channel,35 A,100 V,0.02 Ohm,10 V,1.7 V Rohs Compliant: Yes |Infineon IPD35N10S3L26ATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 15321 |
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$0.7340 / $1.6700 | Buy Now |
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DISTI #
86AK5209
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Newark | Mosfet, N-Ch, 100V, 35A, To-252 Rohs Compliant: Yes |Infineon IPD35N10S3L26ATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6280 / $0.6750 | Buy Now |
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DISTI #
IPD35N10S3L26ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 35A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9603 In Stock |
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$0.6030 / $2.1400 | Buy Now |
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DISTI #
IPD35N10S3L26ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD35N10S3L26ATMA1) RoHS: Compliant Min Qty: 519 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 50932 Partner Stock |
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$0.5695 / $0.7035 | Buy Now |
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DISTI #
726-IPD35N10S3L26ATM
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Mouser Electronics | MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T RoHS: Compliant | 8463 |
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$0.6020 / $1.3900 | Buy Now |
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Future Electronics | Single N-Channel 100 V 24 mOhm 30 nC OptiMOS™ Power Mosfet - TO-252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 5000Reel |
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$0.5750 / $0.6000 | Buy Now |
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DISTI #
83145335
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Verical | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 2500 Package Multiple: 2500 Date Code: 2421 | Americas - 5000 |
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$0.5832 / $0.6076 | Buy Now |
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DISTI #
71240097
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Verical | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 39 Package Multiple: 1 Date Code: 2331 | Americas - 2435 |
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$0.7875 / $0.8150 | Buy Now |
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DISTI #
68022114
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Verical | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 10 Package Multiple: 1 Date Code: 2247 | Americas - 1269 |
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$0.6475 | Buy Now |
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Rochester Electronics | IPD35N10 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 50932 |
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$0.5980 / $0.7035 | Buy Now |
Part Details for IPD35N10S3L26ATMA1
IPD35N10S3L26ATMA1 CAD Models
IPD35N10S3L26ATMA1 Part Data Attributes
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IPD35N10S3L26ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD35N10S3L26ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 175 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0319 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 75 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD35N10S3L26ATMA1
This table gives cross-reference parts and alternative options found for IPD35N10S3L26ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD35N10S3L26ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD35N10S3L-26 | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD35N10S3L26ATMA1 vs IPD35N10S3L-26 |