Part Details for IPW60R299CPXK by Infineon Technologies AG
Overview of IPW60R299CPXK by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPW60R299CPXK
IPW60R299CPXK CAD Models
IPW60R299CPXK Part Data Attributes
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IPW60R299CPXK
Infineon Technologies AG
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Datasheet
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IPW60R299CPXK
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.299 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPW60R299CPXK
This table gives cross-reference parts and alternative options found for IPW60R299CPXK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R299CPXK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPW60R299CP | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R299CPXK vs IPW60R299CP |
IPP60R299CP | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPW60R299CPXK vs IPP60R299CP |
FCP260N65S3 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220 N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220, 800-TUBE | onsemi | IPW60R299CPXK vs FCP260N65S3 |
STP16N65M5 | N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package | STMicroelectronics | IPW60R299CPXK vs STP16N65M5 |
IPW60R299CPFKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R299CPXK vs IPW60R299CPFKSA1 |
STW16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | IPW60R299CPXK vs STW16N65M5 |
IPW65R310CFD | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R299CPXK vs IPW65R310CFD |
STI16N65M5 | 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | IPW60R299CPXK vs STI16N65M5 |
IPW65R310CFDFKSA1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R299CPXK vs IPW65R310CFDFKSA1 |