Datasheets
IPW60R299CPXK by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IPW60R299CPXK by Infineon Technologies AG

Overview of IPW60R299CPXK by Infineon Technologies AG

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Part Details for IPW60R299CPXK

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IPW60R299CPXK Part Data Attributes

IPW60R299CPXK Infineon Technologies AG
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IPW60R299CPXK Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.299 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 34 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW60R299CPXK

This table gives cross-reference parts and alternative options found for IPW60R299CPXK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R299CPXK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPW60R299CP Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW60R299CPXK vs IPW60R299CP
IPP60R299CP Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPW60R299CPXK vs IPP60R299CP
FCP260N65S3 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, TO-220 N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220, 800-TUBE onsemi IPW60R299CPXK vs FCP260N65S3
STP16N65M5 N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package STMicroelectronics IPW60R299CPXK vs STP16N65M5
IPW60R299CPFKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW60R299CPXK vs IPW60R299CPFKSA1
STW16N65M5 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 STMicroelectronics IPW60R299CPXK vs STW16N65M5
IPW65R310CFD Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW60R299CPXK vs IPW65R310CFD
STI16N65M5 12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics IPW60R299CPXK vs STI16N65M5
IPW65R310CFDFKSA1 Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW60R299CPXK vs IPW65R310CFDFKSA1

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