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Part Details for IPW65R080CFDAFKSA1 by Infineon Technologies AG
Overview of IPW65R080CFDAFKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPW65R080CFDAFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IPW65R080CFDAFKSA1-ND
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DigiKey | MOSFET N-CH 650V 43.3A TO247-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube | Temporarily Out of Stock |
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$6.3596 / $11.2100 | Buy Now |
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DISTI #
IPW65R080CFDAFKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$7.2295 | Buy Now |
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DISTI #
726-IPW65R080CFDAFKS
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Mouser Electronics | MOSFET N-Ch 650V 43.3A TO247-3 RoHS: Compliant | 40 |
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$7.5300 / $11.2100 | Buy Now |
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Future Electronics | Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$7.3900 / $7.4500 | Buy Now |
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Future Electronics | Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$7.3900 / $7.4500 | Buy Now |
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Bristol Electronics | 273 |
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RFQ | ||
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Rochester Electronics | IPW65R080 - 600V-800V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 7 |
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$5.7800 / $6.8000 | Buy Now |
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DISTI #
IPW65R080CFDAFKSA1
|
Avnet Americas | Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$7.2295 | Buy Now |
|
DISTI #
IPW65R080CFDAFKSA1
|
Avnet Americas | Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$7.2295 | Buy Now |
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DISTI #
SP000875806
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EBV Elektronik | Power MOSFET, AEC-Q101, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole (Alt: SP000875806) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 2 Weeks, 4 Days | EBV - 240 |
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Buy Now |
Part Details for IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1 CAD Models
IPW65R080CFDAFKSA1 Part Data Attributes
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IPW65R080CFDAFKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW65R080CFDAFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1160 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 43.3 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW65R080CFDAFKSA1
This table gives cross-reference parts and alternative options found for IPW65R080CFDAFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R080CFDAFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW65R080CFDFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDAFKSA1 vs IPW65R080CFDFKSA1 |
| IPW65R080CFD | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDAFKSA1 vs IPW65R080CFD |
| IPW65R080CFDA | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDAFKSA1 vs IPW65R080CFDA |