IPW65R080CFDAFKSA1 vs APT38N60SC6 feature comparison

IPW65R080CFDAFKSA1 Infineon Technologies AG

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APT38N60SC6 Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG MICROSEMI CORP
Part Package Code TO-247
Package Description GREEN, PLASTIC PACKAGE-3 D3PAK-3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 1160 mJ 796 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 43.3 A 38 A
Drain-source On Resistance-Max 0.08 Ω 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 137 A 112 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Finish Tin (Sn) TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN

Compare IPW65R080CFDAFKSA1 with alternatives

Compare APT38N60SC6 with alternatives