Part Details for IRF140 by Harris Semiconductor
Overview of IRF140 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF140
IRF140 CAD Models
IRF140 Part Data Attributes
|
|
IRF140
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRF140
Harris Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 135 ns | |
| Turn-on Time-Max (ton) | 133 ns |
Alternate Parts for IRF140
This table gives cross-reference parts and alternative options found for IRF140. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF140, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF140 | 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | IRF140 vs IRF140 |
| IRF140 | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | TT Electronics Resistors | IRF140 vs IRF140 |
| IRF142 | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF140 vs IRF142 |
| IRF140R1 | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | TT Electronics Resistors | IRF140 vs IRF140R1 |
| IRF140 | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | IRF140 vs IRF140 |
| IRF143 | 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | IRF140 vs IRF143 |
| IRF141 | Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | International Rectifier | IRF140 vs IRF141 |
| IRF142 | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | IRF140 vs IRF142 |
| IRF141 | 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF140 vs IRF141 |
| IRF141 | Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | IRF140 vs IRF141 |