Part Details for IRF150 by TT Electronics Resistors
Overview of IRF150 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF150
IRF150 CAD Models
IRF150 Part Data Attributes
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IRF150
TT Electronics Resistors
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Datasheet
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IRF150
TT Electronics Resistors
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | TT Electronics | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-3 | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 152 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF150
This table gives cross-reference parts and alternative options found for IRF150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | IRF150 vs 2N6764 |
IRF150-JQR-BR1 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF150 vs IRF150-JQR-BR1 |
JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | Omnirel Corp | IRF150 vs JANTX2N6764 |
IRF150R1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | IRF150 vs IRF150R1 |
JANTXV2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF150 vs JANTXV2N6764 |
JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF150 vs JANTX2N6764 |
IRF150-JQR-BR1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | IRF150 vs IRF150-JQR-BR1 |
2N6764-QR-BR1 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF150 vs 2N6764-QR-BR1 |
IRF152 | Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | IRF150 vs IRF152 |
2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | IRF150 vs 2N6764 |