| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6764 | Advanced Semiconductor Inc | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF153 vs 2N6764 |
| 2N6764E3 | Microsemi Corporation (now Microchip) | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF153 vs 2N6764E3 |
| 2N6764R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF153 vs 2N6764R1 |
| IRF153 | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | IRF153 vs IRF153 |
| IRF152 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF153 vs IRF152 |
| JAN2N6764 | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF153 vs JAN2N6764 |
| 2N6764 | Microsemi Corporation (now Microchip) | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF153 vs 2N6764 |
| IRF150-JQR-BR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF153 vs IRF150-JQR-BR1 |
| JANTX2N6764 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | IRF153 vs JANTX2N6764 |
| JANTXV2N6764 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | IRF153 vs JANTXV2N6764 |
Part Details for IRF153 by STMicroelectronics
Results Overview of IRF153 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF153 Information
IRF153 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
IRF153 Part Data Attributes
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IRF153
STMicroelectronics
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Datasheet
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IRF153
STMicroelectronics
Power Field-Effect Transistor, 33A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
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| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| Additional Feature | Fast Switching | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Pin/Peg | |
| Terminal Position | Bottom | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF153
This table gives cross-reference parts and alternative options found for IRF153. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF153, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.