Part Details for IRF224 by International Rectifier
Overview of IRF224 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF224
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF224-ND
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DigiKey | N-CHANNEL HERMETIC MOS HEXFET Min Qty: 129 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2200 In Stock |
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$2.3400 | Buy Now |
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Rochester Electronics | IRF224 - N-Channel HERMETIC MOS HEXFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2200 |
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$2.0100 / $2.3600 | Buy Now |
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ES Components | IR IRF224 UNINSPECTED BARE DIE | 1059 in Stock |
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RFQ |
Part Details for IRF224
IRF224 CAD Models
IRF224 Part Data Attributes:
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IRF224
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF224
International Rectifier
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 1.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF224
This table gives cross-reference parts and alternative options found for IRF224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF130SMD05N | Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Resistors | IRF224 vs IRF130SMD05N |
| 2N6755 | Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF224 vs 2N6755 |
| IRF133 | Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF224 vs IRF133 |
| 2N6756 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | IRF224 vs 2N6756 |
| IRF1302STRLPBF | Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF224 vs IRF1302STRLPBF |
| SHD230303 | Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28 | Sensitron Semiconductors | IRF224 vs SHD230303 |
| IRF140 | Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | Vishay Siliconix | IRF224 vs IRF140 |
| 2N6757R1 | 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF224 vs 2N6757R1 |
| IRF120EC | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF224 vs IRF120EC |
| IRF130SMD05DSG-JQR-B | 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF224 vs IRF130SMD05DSG-JQR-B |