Parametric results for: IRF224 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

250 V 2

3 hits Apply

Drain Current-Max (ID) (1)

3.8 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

1.1 Ω 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-204AA 2

3 hits Apply

O-MBFM-P2 2

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

International Rectifier 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

METAL 2

3 hits Apply

ROUND 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

40 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply