Part Details for IRF243 by Harris Semiconductor
Overview of IRF243 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for IRF243
IRF243 CAD Models
IRF243 Part Data Attributes
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IRF243
Harris Semiconductor
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Datasheet
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IRF243
Harris Semiconductor
Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for IRF243
This table gives cross-reference parts and alternative options found for IRF243. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF243, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF243 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | IRF243 vs IRF243 |
| IRF243 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF243 vs IRF243 |
| IRF243 | POWER, FET | National Semiconductor Corporation | IRF243 vs IRF243 |
| IRF243 | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Motorola Semiconductor Products | IRF243 vs IRF243 |
| IRF243 | 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF243 vs IRF243 |
| IRF243 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | IRF243 vs IRF243 |
| IRF243 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF243 vs IRF243 |