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Transistors Power Field-Effect Transistors IRF240

Transistors
IRF240
Description: Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Overview of IRF240 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF240 by International Rectifier

Part # Manufacturer Description Stock Price Buy
DISTI # 82698833
Verical Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2309 Americas - 450
  • 1 $22.8160
  • 10 $22.5860
  • 25 $22.4135
$22.4135 / $22.8160 Buy Now
ES Components 0 7 in Stock
RFQ

CAD Models for IRF240 by International Rectifier
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Part Data Attributes for IRF240 by International Rectifier
Parametric Data

IRF240
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
BFM
Package Description
HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Pin Count
2
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
450 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
18 A
Drain-source On Resistance-Max
0.21 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AE
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
125 ns
Turn-on Time-Max (ton)
172 ns
Want to compare parts?
  1. IRF240
    International Rectifier
    Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
    VS

Alternate Parts for IRF240

This table gives cross-reference parts and alternative options found for IRF240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF241 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF240 vs IRF241
IRF243 Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier IRF240 vs IRF243
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF240 vs IRF242
Part Number Description Manufacturer Compare
IRF240R Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF240 vs IRF240R
IRF244 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF240 vs IRF244
IRF243R 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF240 vs IRF243R
IRF243R Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF240 vs IRF243R
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF240 vs IRF240
IRF240 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF240 vs IRF240
IRF244 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF240 vs IRF244
IRF241R 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF240 vs IRF241R
IRF244 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF240 vs IRF244
UFN240 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF240 vs UFN240

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