Datasheets
IRF245 by:

Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF245 by Harris Semiconductor

Overview of IRF245 by Harris Semiconductor

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Part Details for IRF245

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IRF245 Part Data Attributes

IRF245 Harris Semiconductor
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IRF245 Harris Semiconductor Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 550 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.34 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF245

This table gives cross-reference parts and alternative options found for IRF245. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF245, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF245 13A, 250V, 0.34ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF245 vs IRF245
Part Number Description Manufacturer Compare
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF245 vs IRF240
IRF245 13A, 250V, 0.34ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF245 vs IRF245
IRF244 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF245 vs IRF244
IRF243 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF245 vs IRF243
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF245 vs IRF240
IRF241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier IRF245 vs IRF241
IRF241 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF245 vs IRF241
IRF241R 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF245 vs IRF241R
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF245 vs IRF242
IRF240 18A, 200V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-204AA, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF245 vs IRF240

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