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Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0386
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Newark | Mosfet Transistor, N Channel, 110 A, 55 V, 0.008 Ohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF3205STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2377 |
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$1.2300 / $1.5100 | Buy Now |
DISTI #
86AK5350
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Newark | Mosfet, N-Ch, 55V, 110A, To-263 Rohs Compliant: Yes |Infineon IRF3205STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7800 / $0.9300 | Buy Now |
DISTI #
IRF3205STRLPBFCT-ND
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DigiKey | MOSFET N-CH 55V 110A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1430 In Stock |
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$0.7509 / $1.7300 | Buy Now |
DISTI #
IRF3205STRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.6776 / $0.8228 | Buy Now |
DISTI #
IRF3205STRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3205STRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.6776 / $0.8228 | Buy Now |
DISTI #
942-IRF3205STRLPBF
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Mouser Electronics | MOSFET MOSFT 55V 110A 8mOhm 97.3nC RoHS: Compliant | 8500 |
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$0.7500 / $1.4500 | Buy Now |
DISTI #
70017659
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 8 Milliohms, ID 110A, D2Pak, PD 200W, VGS +/-20V | Infineon IRF3205STRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.2000 / $1.5000 | RFQ |
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Future Electronics | Single N-Channel 55V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 84800Reel |
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$0.7100 / $0.7700 | Buy Now |
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Future Electronics | Single N-Channel 55V 8 mOhm 146 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 5600Reel |
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$0.7100 / $0.7700 | Buy Now |
DISTI #
69150117
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Verical | Trans MOSFET N-CH Si 55V 110A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2301 | Americas - 53600 |
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$0.6167 / $0.6522 | Buy Now |
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IRF3205STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3205STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 264 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 211 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 390 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 115 ns | |
Turn-on Time-Max (ton) | 115 ns |