Part Details for IRF350R1 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRF350R1 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IRF350R1
IRF350R1 CAD Models
IRF350R1 Part Data Attributes
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IRF350R1
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRF350R1
TT Electronics Power and Hybrid / Semelab Limited
14A, 400V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | TO-3 | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 11.3 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF350R1
This table gives cross-reference parts and alternative options found for IRF350R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF350R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF353 | Power Field-Effect Transistor, 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN | Unitrode Corp (RETIRED) | IRF350R1 vs IRF353 |
| JAN2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF350R1 vs JAN2N6768 |
| JANTXV2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | IRF350R1 vs JANTXV2N6768 |
| UFN350 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF350R1 vs UFN350 |
| JANTX2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Microsemi Corporation | IRF350R1 vs JANTX2N6768 |
| IRF350 | 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | IRF350R1 vs IRF350 |
| JANHCA2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | IRF350R1 vs JANHCA2N6768 |
| IRF350 | Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF350R1 vs IRF350 |
| IRF353 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,13A I(D),TO-204AA | Intersil Corporation | IRF350R1 vs IRF353 |
| IRF350 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF350R1 vs IRF350 |