Datasheets
IRF353 by:

Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, METAL PACKAGE-2

Part Details for IRF353 by Motorola Semiconductor Products

Overview of IRF353 by Motorola Semiconductor Products

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Part Details for IRF353

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IRF353 Part Data Attributes

IRF353 Motorola Semiconductor Products
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IRF353 Motorola Semiconductor Products Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, METAL PACKAGE-2
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description METAL PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF353

This table gives cross-reference parts and alternative options found for IRF353. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF353, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTX2N6768 14A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF353 vs JANTX2N6768
IRF353 13A, 350V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, METAL PACKAGE-2 Motorola Mobility LLC IRF353 vs IRF353
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier IRF353 vs 2N6768PBF
IRF353 Power Field-Effect Transistor, 13A I(D), 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation IRF353 vs IRF353
IRF350 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,14A I(D),TO-204AA Freescale Semiconductor IRF353 vs IRF350
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Omnirel Corp IRF353 vs JANTXV2N6768
IRF350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF353 vs IRF350
IRF353 Power Field-Effect Transistor, 350V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) IRF353 vs IRF353
JAN2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF353 vs JAN2N6768
IRF351 Power Field-Effect Transistor, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corp (RETIRED) IRF353 vs IRF351
Part Number Description Manufacturer Compare
IRF352 Power Field-Effect Transistor, 13A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF353 vs IRF352
IRF350 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF353 vs IRF350
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF353 vs 2N6768
JANTXV2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF353 vs JANTXV2N6768
IRF351 Power Field-Effect Transistor, 15A I(D), 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN Unitrode Corporation IRF353 vs IRF351
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency IRF353 vs JANTX2N6768
JANTX2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF353 vs JANTX2N6768
2N6768PBF Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier IRF353 vs 2N6768PBF
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF353 vs 2N6768
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF353 vs 2N6768

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