Part Details for IRF3805SPBF by International Rectifier
Results Overview of IRF3805SPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF3805SPBF Information
IRF3805SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF3805SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 64 |
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Bristol Electronics | 20 |
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Quest Components | 75 A, 55 V, 0.0033 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB | 40 |
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$3.8640 / $5.7960 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant |
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Part Details for IRF3805SPBF
IRF3805SPBF CAD Models
IRF3805SPBF Part Data Attributes
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IRF3805SPBF
International Rectifier
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Datasheet
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IRF3805SPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | D2PAK | |
| Package Description | Lead Free, Plastic, D2pak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, High Reliability, Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 940 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 890 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - With Nickel (Ni) Barrier | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF3805SPBF
This table gives cross-reference parts and alternative options found for IRF3805SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3805SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| AUIRF3805STRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRF3805SPBF vs AUIRF3805STRL |
| IRF3805STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF3805SPBF vs IRF3805STRR |
IRF3805SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF3805SPBF is -55°C to 175°C.
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Yes, the IRF3805SPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or logic gate output.
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The maximum gate-source voltage (Vgs) for the IRF3805SPBF is ±20V.
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Yes, the IRF3805SPBF is suitable for high-frequency switching applications up to 1MHz due to its low gate charge and fast switching times.
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No, the IRF3805SPBF is not a radiation-hardened device and is not suitable for use in high-radiation environments.